Kahng, D. Electrical area managed semiconductor system. US patent 3,102,230 (1963).
Auth, C. et al. A 22 nm excessive efficiency and low-power CMOS know-how that includes fully-depleted tri-gate transistors, self-aligned contacts and excessive density MIM capacitors. In Proc. Symposium on VLSI Expertise 131–132 (IEEE, 2012).
Yeap, G. et al. 2 nm platform know-how that includes energy-efficient nanosheet transistors and interconnects co-optimized with 3DIC for AI, HPC and cell SoC purposes. In Proc. IEEE Worldwide Electron Gadgets Assembly 1091–1094 (IEEE, 2024).
Cao, W. et al. The longer term transistors. Nature 620, 501–515 (2023).
Agrawal, A. et al. Silicon RibbonFET CMOS at 6 nm gate size. In Proc. IEEE Worldwide Electron Gadgets Assembly 605–608 (IEEE, 2024).
English, C. D., Shine, G., Dorgan, V. E., Saraswat, Ok. C. & Pop, E. Improved contacts to MoS2 transistors by ultra-high vacuum metallic deposition. Nano Lett. 16, 3824–3830 (2016).
O’Brien, Ok. P. et al. Course of integration and future outlook of 2D transistors. Nat. Commun. 14, 6400 (2023).
Liu, Y. et al. Guarantees and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).
Mortelmans, W. et al. Gate oxide module growth for scaled GAA 2D FETs enabling SS −1 and file Idmax >900 μA μm−1 at Lg Proc. IEEE Worldwide Electron Gadgets Assembly 365–368 (IEEE, 2024).
Lockhart de la Rosa, C. J. & Kar, G. S. Introducing 2D-material based mostly units within the logic scaling roadmap. Semicond. Dig. 6, 17–21 (2024).
IEEE Worldwide Roadmap for Gadgets and Techniques; https://irds.ieee.org/ (accessed 25 April 2025).
Pal, A., Chavan, T., Jabbour, J., Cao, W. & Banerjee, Ok. Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling. Nat. Electron. 7, 1147–1157 (2024).
Dubey, P. Ok. et al. Simulation of vertically stacked 2-D nanosheet FETs. IEEE Trans. Electron Gadgets 72, 1494–1500 (2025).
Wu, F. et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature 603, 259–264 (2022).
Chen, S. et al. Channel and speak to size scaling of two-dimensional transistors utilizing composite metallic electrodes. Nat. Electron. 8, 394–402 (2025).
Pan, H. & Zhang, Y.-W. Edge-dependent structural, digital and magnetic properties of MoS2 nanoribbons. J. Mater. Chem. 22, 7280–7290 (2012).
Li, Y., Zhou, Z., Zhang, S. & Chen, Z. MoS2 nanoribbons: excessive stability and strange digital and magnetic properties. J. Am. Chem. Soc. 130, 16739–16744 (2008).
Mochizuki, S. et al. Stacked gate-all-around nanosheet pFET with extremely compressive strained Si1–xGex channel. In Proc. IEEE Worldwide Electron Gadgets Assembly 19–22 (IEEE, 2020).
McClellan, C. J., Yalon, E., Smithe, Ok. Ok. H., Suryavanshi, S. V. & Pop, E. Excessive present density in monolayer MoS2 doped by AlOx. ACS Nano 15, 1587–1596 (2021).
Bourjot, E. et al. Wrap-all-around contact for nanosheet-FET and methodology of forming identical. US patent 10,559,656 (2020).
Wu, Z. et al. Defects as an element limiting provider mobility in WSe2: a spectroscopic investigation. Nano Res. 9, 3622–3631 (2016).
Neilson, Ok. Advancing Two-dimensional Semiconductor Gadgets By Progress, Fabrication, And Contact Engineering. PhD thesis, Stanford Univ. (2025).
Ahmed, Z. et al. Introducing 2D-FETs in system scaling roadmap utilizing DTCO. In Proc. IEEE Worldwide Electron Gadgets Assembly (IEDM) 465–468 (IEEE, 2020).
Wang, M. A. & Pop, E. Monte Carlo simulation {of electrical} transport with joule heating and pressure in monolayer MoS2 units. Nano Lett. 25, 6841–6847 (2025).
Mignuzzi, S. et al. Impact of dysfunction on Raman scattering of single-layer MoS2. Phys. Rev. B 91, 195411 (2015).
Wu, J.-B. et al. Monolayer molybdenum disulfide nanoribbons with excessive optical anisotropy. Adv. Choose. Mater. 4, 756–762 (2016).
Hoang, L. et al. Understanding the impression of contact-induced pressure on {the electrical} efficiency of monolayer WS2 transistors. Nano Lett. 24, 12768–12774 (2024).
Ko, J.-S. et al. Reaching 1-nm-scale equal oxide thickness top-gate dielectric on monolayer transition metallic dichalcogenide transistors with CMOS-friendly approaches. IEEE Trans. Electron Gadgets 72, 1514–1519 (2025).
Ko, J.-S. et al. Sub-nanometer equal oxide thickness and threshold voltage management enabled by silicon seed layer on monolayer MoS2 transistors. Nano Lett. 25, 2587–2593 (2025).
Salman, E. & Friedman, E. G. Excessive Efficiency Built-in Circuit Design (McGraw-Hill, 2012).
Li, X. et al. Width-dependent steady progress of atomically skinny quantum nanoribbons from nanoalloy seeds in chalcogen vapor. Nat. Commun. 15, 10080 (2024).
Saunders, A. P. et al. Direct exfoliation of nanoribbons from bulk van der Waals crystals. Small 20, 2470348 (2024).
Li, X. et al. Nickel particle–enabled width-controlled progress of bilayer molybdenum disulfide nanoribbons. Sci. Adv. 7, eabk1892 (2021).
Chowdhury, T. et al. Substrate-directed synthesis of MoS2 nanocrystals with tunable dimensionality and optical properties. Nat. Nanotechnol. 15, 29–34 (2020).
Ma, Z. et al. Lattice-guided progress of dense arrays of aligned transition metallic dichalcogenide nanoribbons with excessive catalytic reactivity. Sci. Adv. 11, eadr8046 (2025).
Hoque, M. A. et al. Ultranarrow semiconductor WS2 nanoribbon field-effect transistors. Nano Lett. 25, 1750–1757 (2025).
Davelou, D., Kopidakis, G., Kaxiras, E. & Remediakis, I. N. Nanoribbon edges of transition-metal dichalcogenides: stability and digital properties. Phys. Rev. B 96, 165436 (2017).
Aslam, M. A. et al. Single-crystalline nanoribbon community area impact transistors from arbitrary two-dimensional supplies. npj 2D Mater. Appl. 6, 76 (2022).
Chen, S. et al. Monolayer MoS2 nanoribbon transistors fabricated by scanning probe lithography. Nano Lett. 19, 2092–2098 (2019).
Jiang, J. et al. Schottky-barrier quantum nicely in two-dimensional semiconductor nanotransistors. Mater. At present Phys. 15, 100275 (2020).
Kotekar-Patil, D., Deng, J., Wong, S. L., Lau, C. S. & Goh, Ok. E. J. Single layer MoS2 nanoribbon area impact transistor. Appl. Phys. Lett. 114, 013508 (2019).
Chen, S., Zhang, Y., King, W. P., Bashir, R. & van der Zande, A. M. Edge-passivated monolayer WSe2 nanoribbon transistors. Adv. Mater. 36, 2313694 (2024).
Lan, H.-Y. et al. Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2. npj 2D Mater. Appl. 9, 5 (2025).
O’Brien, Ok. P. et al. Advancing 2D monolayer CMOS by contact, channel and interface engineering. In Proc. IEEE Worldwide Electron Gadgets Assembly 163–166 (IEEE, 2021).
Smithe, Ok. Ok. H., Suryavanshi, S. V., Muñoz Rojo, M., Tedjarati, A. D. & Pop, E. Low variability in artificial monolayer MoS2 units. ACS Nano 11, 8456–8463 (2017).
Zhang, Z. et al. Chemically tailor-made progress of 2D semiconductors by way of hybrid metallic–natural chemical vapor deposition. ACS Nano 18, 25414–25424 (2024).
Hoang, L. et al. Low resistance p-type contacts to monolayer WSe2 by chlorinated solvent doping. Nat. Commun. 17, 718 (2026).
Krayev, A. et al. Excitation laser power dependence of the gap-mode TERS spectra of WS2 and MoS2 on silver. ACS Photonics 12, 1535–1544 (2025).
Liu, H., Gu, J. & Ye, P. D. MoS2 nanoribbon transistors: transition from depletion mode to enhancement mode by channel-width trimming. IEEE Electron Machine Lett. 33, 1273–1275 (2012).