Infineon Applied sciences AG has launched the CoolSiC MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK bundle. The brand new units ship optimised thermal efficiency, system effectivity and energy density. They have been particularly designed for demanding industrial functions that require excessive efficiency and reliability, comparable to electrical car chargers, photo voltaic inverters, uninterruptible energy provides, motor drives and solid-state circuit breakers.
The brand new CoolSiC 1200 V G2 know-how affords important enhancements over the earlier era, enabling as much as 25% decrease switching losses for equal RDS(on) units, thereby growing system effectivity by as much as 0.1%. Utilising Infineon’s improved .XT die connect interconnection know-how, the G2 units obtain greater than 15% decrease thermal resistance and an 11% discount in MOSFET temperature in comparison with G1 household merchandise. The excellent RDS(on) values, starting from 4 mΩ to 78 mΩ, together with a broad product portfolio allow designers the pliability to optimise system efficiency for his or her goal functions. Moreover, the brand new know-how helps overload operation as much as a junction temperature (Tvj) of 200°C and options excessive robustness towards parasitic turn-on, making certain dependable operation beneath dynamic and demanding situations.
The CoolSiC MOSFETs 1200 V G2 can be found in two Q-DPAK configurations: a single change and a twin half-bridge. Each variants are a part of Infineon’s broader X-DPAK top-side cooling platform. With a standardised bundle top of two.3 mm throughout all TSC variants – together with Q-DPAK and TOLT – the platform affords design flexibility and allows clients to scale and mix totally different merchandise beneath a single heatsink meeting. This design flexibility simplifies superior energy system growth, making it simpler for purchasers to customize and scale their options.
The Q-DPAK bundle enhances thermal efficiency by enabling direct warmth dissipation from the gadget’s high floor to the heatsink. This direct thermal path delivers higher warmth switch effectivity in comparison with conventional bottom-side cooled packages, enabling extra compact designs. Moreover, the Q-DPAK bundle format design permits for minimised parasitic inductance, which is vital for larger switching speeds. This enhances system effectivity and reduces voltage overshoot threat. The small footprint of the bundle helps compact system designs, whereas its compatibility with automated meeting processes simplifies manufacturing, making certain cost-efficiency and scalability.
Availability
The CoolSiC MOSFET 1200 V G2 in Q-DPAK single change and twin half-bridge bundle variants can be found now. Additional info is accessible at www.infineon.com/coolsic-mosfet-discretes.
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