van der Waals (vdW) heterojunction photodetectors exhibit excessive efficiency as a consequence of their high-quality interface and excessive design flexibility, and distinctive properties of two-dimensional (2D) supplies. Significantly, combining 2D semiconductors with technologically mature semiconductors gives a promising pathway towards high-performance photodetection. Herein, we report a high-performance self-driven photodetector primarily based on a vertical GeSe/Si vdW heterojunction, constructed utilizing high-quality GeSe single crystals grown by the chemical vapor transport technique, which advantages from the type-II band alignment and the sturdy built-in electrical area on the GeSe/Si interface. Because of this, the photodetector reveals a excessive responsivity of 29.8 A W−1, a excessive EQE of 6959.7%, a excessive detectivity of two.1 × 1012 Jones, and a quick rise/decay time of 8.5 µs/23.7 µs underneath 532 nm laser illumination at zero bias. As well as, the GeSe/Si vdW heterojunction photodetectors exhibit a steady broadband photoresponse and pronounced photovoltaic habits underneath visible-light illumination (405–604 nm). This work highlights the benefits of integrating 2D GeSe with silicon by way of vdW heterojunction engineering and gives a big technique for creating self-driven, high-performance photodetectors towards sensible optoelectronic purposes.
