SEM-guided low-kV FIB ending for modern semiconductor failure evaluation



Be part of us to find how the brand new ZEISS Crossbeam 750 with its see whilst you mill functionality delivers precision and readability—each time—for demanding FIB-SEM workflows. Designed for terribly difficult TEM lamella preparation, tomography, superior nanofabrication, and APT‑prepared elevate‑out, Crossbeam 750 combines a brand new Gemini 4 SEM goal lens, a double deflector, and a subsequent‑era scan generator to raise each picture high quality and course of confidence. You’ll learn the way higher decision and higher SNR translate into extra picture element and shorter acquisition instances, whereas the low‑kV FIB efficiency allows extra exact lamella prep.

We’ll display Excessive Dynamic Vary (HDR) Mill + SEM—an interwoven SEM/FIB scanning mode that suppresses FIB‑generated background. This allows fast, clear visible suggestions, even throughout nudging the FIB sample dwell whereas milling . The consequence: assured endpointing with uninterrupted FIB milling and pristine, metrology‑grade surfaces with the bottom attainable pattern harm. 

This session is right for semiconductor failure analysists, yield groups and supplies scientists in search of quicker time‑to‑TEM, increased first‑move success, and constant outcomes at low kV. See how Crossbeam 750 empowers you to make earlier cease‑milling choices, lower rework, and reliably plan turnaround time—so you’ll be able to transfer from pattern to perception with confidence.

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